| PART |
Description |
Maker |
| BD201 BD202 BD204 BD203 |
EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS
|
GE Security, Inc.
GE[General Semiconductor]
|
| 2N6261 |
HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| MJ10009 MJ10008 |
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE
|
BOCA[Boca Semiconductor Corporation]
|
| BDS17SMD BDS16SMD BDS16 BDS17 |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| TIP140T |
NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt ResistorNPN硅外延达林顿晶体管（内置基极-射极分流电阻单片结构
|
Fairchild Semiconductor Corporation
|
| BUL58B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
| BUL56B BUL55B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
| BUL58A BUL56A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
| BUL50A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
Seme LAB
TT electronics Semelab Limited
|
| BUL55B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
|
| BUL49A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
